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| 2SA1577 PNP Silicon Elektronische Bauelemente RoHS Compliant Product General Purpose Transistor A L 3 1 2 1 3 Top View 2 BS SOT-323 Dim A B C D K J Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 V G C FEAT URES Power dissipation PCM Collector current ICM : -500 Collector-base voltage V(BR)CBO : TJ -40 mA : 200 mW D H G H J K L S V COLLECTOR 3 Temp.=25 1 BASE All Dimension in mm 2 EMITTER V to +150 o Operating and storage junction temperature range Tstg: -55 ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test conditions Ic=-100 A,IE=0 Ic=-1 mA,IB=0 IE=-100A,IC=0 VCB=-20V,IE=0 VEB=-4 V,IC=0 VCE=-3 V,IC=-10mA IC=-100mA,IB=-10mA VCE=-5 V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=1MHz MIN TYP MAX UNIT V V V Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance -40 -32 -5 -1 -1 82 390 -0.4 200 7 A A V MHz pF fT Cob CLASSIFICATION OF Rank Range Marking http://www.SeCoSGmbH.com hFE(1) P 82-180 HP Q 120-270 HQ R 180-390 HR Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SA1577 PNP Silicon Elektronische Bauelemente General Purpose Transistor Electrical characteristic curves http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SA1577 PNP Silicon Elektronische Bauelemente General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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